Abstract

Tellurium tetrachloride was combined with an aryl compound, anisole, in refluxing chloroform to obtain an aryl tellurium trichloride, trichloro (4-methoxyphenyl) tellurium(IV). Following isolation of this compound, it was reacted with a thiourea containing ligand, 1,1,3,3-tetramethylthiourea. The products were purified by recrystalizing them in chloroform, and then dried by vacuum filtration. Melting point determinations and elemental microanalysis, using NMR and infrared spectrophotometers, were used to characterize the products.

This research was performed in hopes of discovering a semiconductor-doping material that operates with a low current flow. A more cost effective doping material may also be discovered if this research, and the physical application of the compound to a semiconductor, is successful. The results from the NMR analysis supported the expected structure. Additionally, the complex was found to have volatile properties and, relative to compounds synthesized previously, an increased stability in air, which leads us to believe that there is an increase in volality. The increase in volality signifies that the compound's electrons will move around at a lower temperature than the initial compounds. Semiconductors conduct electricity through the movement of electrons, therefore an increase in electron movement increases the productivity of the doping material.